%0 Journal Article
%K Photodiodes
%K UV light
%K ZnO nanowires
%A Lei Luo
%A Yanfeng Zhang
%A Samuel S Mao
%A Liwei Lin
%B Sensors and Actuators A: Physica
%D 2006
%F Semi-conduct
%G eng
%N 2
%P 201-206
%R 10.1016/j.sna.2005.06.023
%T Fabrication and characterization of ZnO nanowires based UV photodiodes
%V 127
%8 03/2006
%X <p>A heterojunction of n-type zinc oxide (ZnO) nanowires and p-type silicon has been successfully constructed to demonstrate ultraviolet (UV) photodiodes. The prototype device consists of naturally doped n-type ZnO nanowires grown on top of a (1 0 0) p-silicon substrate by the bottom-up growth process. The diameter of the nanowires is in the range of 70–120 nm, and the length is controlled by the growth time. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current–voltage (I–V) characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of ∼0.07 A/W for UV light (365 nm) under a 20 V reverse bias.</p>