%0 Journal Article
%A Wanqing Cao
%A Arlon J Hunt
%B Solid State Communications
%D 1994
%G eng
%P 645-648
%T Thermal annealing of photoluminescent Si deposited on silica aerogels
%V 91
%X <p>Photoluminescence (PL) of chemically vapor deposited Si on silica aerogels has been investigated as a function of annealing temperature up to 650°C in air. The PL peak red shifts considerably with temperatures up to 350°C and then slightly blue shifts above 350°C. There are at least two different oxidation stages in the thermal annealing of porous Si: surface oxidation below 350°C, which results in higher luminescence yield particularly for large Si particles, and internal oxidation above 350°C, which reduces the effective particle size.</p>