%0 Journal Article
%K Optical properties
%K Dual magnetron sputtering
%K Electrical
%K Structural
%K Tungsten oxynitride thin films
%A Sodky H Mohamed
%A André Anders
%B Surface and Coatings Technology
%D 2006
%G eng
%N 6
%P 2977-2983
%R 10.1016/j.surfcoat.2006.06.008 
%T Structural, optical and electrical properties of WOxNy films deposited by reactive dual magnetron sputtering
%V 201
%1 <p>Windows and Daylighting Group</p>
%2 LBNL-59900
%X <p>Thin films of tungsten oxynitrides were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios. The presence of even relatively small amounts of oxygen led to close-to-stoichiometric WO<sub>3</sub>, with little incorporation of nitrogen, therefore the films were labeled as WO<sub><em>x</em></sub>(N<sub><em>y</em></sub>). Oxygen had a great effect not only on the composition but on the structure of WO<sub><em>x</em></sub>(N<sub><em>y</em></sub>) films, as shown by Rutherford backscattering and X-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89% of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high. The deposition rate increased from 0.31 to 0.89 nm/s, the room temperature resistivity decreased from 1.65 × 10<sup>8</sup> to 1.82 × 10<sup>− 2</sup> Ω cm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WO<sub><em>x</em></sub>(N<sub><em>y</em></sub>) films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.</p>