%0 Journal Article %A Jennifer T Ross %A Michael D Rubin %A Ture K Gustafson %B Journal of Materials Research %D 1991 %G eng %N 10 %P 2613-2616 %T Single Crystal Wurtzite GaN on (111) GaAs with AIN Buffer Layers Grown by Reactive Magnetron Sputter Deposition %V 8 %1

Windows and Daylighting Group

%2 LBL-33362 %8 10/1993 %X

We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AIN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550-620 °C. However, using a high temperature 200 Å AIN buffer layer epitaxial GaN is produced. Crystal structure and quality is measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AlN buffer layers by any growth technique. Simple AlN/GaN heterostructures grown by rf reactive sputter deposition on (111) GaAs are also demonstrated.