%0 Journal Article
%A Jennifer T Ross
%A Michael D Rubin
%B Mater. Lett
%D 1991
%G eng
%L LBL-31726
%P 215
%T High Quality GaN Grown by Reactive Sputtering
%V 12
%1 <p>Windows and Daylighting Group</p>
%2 LBL-31726
%X <p>Gallium nitride films were grown by reactive rf magnetron sputtering on sapphire substrates. Crystalline (1120) GaN films were obtained on (0112) sapphire at substratestemperatures between 640-680 &deg;C. High N<sub>2</sub> partial pressures are required to crystalize the GaN films. Nitrogen incorporation and crystal quality of GaN films are examined as a function of substrate temperature and nitrogen partial pressure. Band gaps of 3.4 eV, and photoluminescence peaks as narrow as 11 meV are reported for sputtered GaN films.</p>