%0 Conference Paper
%A Jennifer T Ross
%A Michael D Rubin
%A Ture K Gustafson
%B Materials Research Society Symposium
%D 1992
%G eng
%P 457
%R 10.1557/PROC-242-457
%T Crystalline Growth of Wurtzite GAN on (111) GaAs
%V 242
%1 <p>Windows and Daylighting Group</p>
%2 LBL-32258
%X <p>Gallium Nitride films were grown on (111) Gallium Arsenide substrates using reactive rf magnetron sputtering. Despite a 20% lattice mismatch and different crystal structure, wurtzite GaN films grew epitaxially in basal orientation on (111) GaAs substrates. Heteroepitaxy was observed for growth temperatures between 550-600°C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17°. Possible surface reconstructions to explain the epitaxial growth are presented.</p>