%0 Conference Paper
%A Nathan Newman
%A T.C Fu
%A Z Liu
%A Zuzanna Liliental-Weber
%A Michael D Rubin
%A James S Chan
%A Erin C Jones
%A Jennifer T Ross
%A Ian M Tidswell
%A Kin Man Yu
%A Nathan W Cheung
%A Eicke R Weber
%D 1994
%G eng
%L LBL-37296
%T Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy
%2 LBL-37296
%X <p>Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.</p>