TY - JOUR
KW - Integrated circuits
KW - High temperature superconductors
KW - Superconducting materials
KW - Semiconducting silicon
KW - Superconducting devices
KW - VLSI
KW - Fast Switching Speeds
KW - Hybrid Circuits
AU - A Inam
AU - X.D Wu
AU - T Venkatesan
AU - D.M Hwang
AU - C.C Chang
AU - Ramamoorthy Ramesh
AU - S Miura
AU - S Matsubara
AU - Y Miyasaka
AU - N Shohata
AB - The integration of high temperature superconductors (HTSCs) with conventional semiconductor-based technology would have important consequences for micro-electronics, with the promise of high performance hybrid circuits incorporating the best of what superconductors and semiconductors have to offer as well as the possibility for novel devices. Adding to the well known advantages of semiconductors, passive superconductive elements such as transmission lines offer the possibility of low loss, dispersionless signal transmission while active devices such as Josephson junctions make it possible to achieve very fast switching speeds with limited generation of heat. Film growth issues that limit the quality of (high temperature superconductor) HTSC thin films deposited directly on Si are discussed. Promising initial results-using intermediate (buffer) layers-represent a major step towards complete integration of HTSCs with Si and VLSI technology.
BT - Solid State Technology
LA - eng
M1 - 2
N1 - cited By 16
N2 - The integration of high temperature superconductors (HTSCs) with conventional semiconductor-based technology would have important consequences for micro-electronics, with the promise of high performance hybrid circuits incorporating the best of what superconductors and semiconductors have to offer as well as the possibility for novel devices. Adding to the well known advantages of semiconductors, passive superconductive elements such as transmission lines offer the possibility of low loss, dispersionless signal transmission while active devices such as Josephson junctions make it possible to achieve very fast switching speeds with limited generation of heat. Film growth issues that limit the quality of (high temperature superconductor) HTSC thin films deposited directly on Si are discussed. Promising initial results-using intermediate (buffer) layers-represent a major step towards complete integration of HTSCs with Si and VLSI technology.
PY - 1990
SP - 113
EP - 118
T2 - Solid State Technology
TI - Superconducting thin films on Si. HTSCs meet VLSI
VL - 33
SN - 0038111X
ER -