TY - JOUR
AU - T Sands
AU - J.P Harbison
AU - M.L Leadbeater
AU - S.J Allen Jr
AU - G.W Hull
AU - Ramamoorthy Ramesh
AU - V.G Keramidas
AB - We report the growth of epitaxial τ-MnAl ferromagnetic films on GaAs substrates by molecular beam epitaxy (MBE). Reflection high-energy electron diffraction and x-ray diffraction show that the τ-phase films grow with the c axis of the tetragonal unit cell normal to the 100GaAs substrate surface. In the bulk, τ-MnAl is a metastable ferromagnetic phase with uniaxial magnetocrystalline anisotropy. The large hysteresis observed in the Hall resistance versus applied magnetic field suggests that the easy magnetization direction is indeed parallel to the c axis in the MBE-grown films. The growth of these ferromagnetic films with perpendicular magnetization on compound semiconductor substrates creates the possibility of novel devices that combine magnetic memory and magneto-optic functions with semiconductor electronics and photonics.
BT - Applied Physics Letters
DO - 10.1063/1.103826
LA - eng
M1 - 24
N1 - cited By 89
N2 - We report the growth of epitaxial τ-MnAl ferromagnetic films on GaAs substrates by molecular beam epitaxy (MBE). Reflection high-energy electron diffraction and x-ray diffraction show that the τ-phase films grow with the c axis of the tetragonal unit cell normal to the 100GaAs substrate surface. In the bulk, τ-MnAl is a metastable ferromagnetic phase with uniaxial magnetocrystalline anisotropy. The large hysteresis observed in the Hall resistance versus applied magnetic field suggests that the easy magnetization direction is indeed parallel to the c axis in the MBE-grown films. The growth of these ferromagnetic films with perpendicular magnetization on compound semiconductor substrates creates the possibility of novel devices that combine magnetic memory and magneto-optic functions with semiconductor electronics and photonics.
PY - 1990
SP - 2609
EP - 2611
T2 - Applied Physics Letters
TI - Epitaxial ferromagnetic τ-MnAl films on GaAs
VL - 57
SN - 00036951
ER -