TY - JOUR
KW - High temperature superconductors
KW - Perovskite structure
KW - Yttrium barium copper oxides
KW - Oxide superconductors
KW - Oxides - Superconductivity
KW - Crystals - Atomic Structure
KW - Superconducting Films - Interfaces
KW - Cubic Structure
KW - Growth Interfaces
AU - Ramamoorthy Ramesh
AU - A Inam
AU - D.M Hwang
AU - T.S Ravi
AU - T Sands
AU - X.X Xi
AU - X.D Wu
AU - Q Li
AU - T Venkatesan
AU - R Kilaas
AB - We have examined the atomic structure of growth interfaces in thin films of Y-Ba-Cu-O grown on [001] perovskite or cubic substrates. At substrate heater temperatures in the range of 780–820 °C c-axis oriented growth is observed on these substrates. On SrTi03, the first layer appears to be either a BaO or a CuO2plane while on LaA103the first layer appears to be a CuO chain layer. The mismatch on the a-b plane is accommodated by the formation of interface dislocations. Defects on the substrate surface propagate as defects in the film. These defects are primarily translational boundaries and in some cases second phases. At lower substrate heater temperatures, i.e., 650–700 °C, a, b-axis growth dominates. Defects and steps on the substrate surface are more detrimental in the growth of a, b-axis oriented films, since they tend to favor the nucleation of c-axis oriented domains. This is ascribed to the ledge mechanism of c-axis film growth, for which the surface steps are good nucleation sites. © 1991, Materials Research Society. All rights reserved.
BT - Journal of Materials Research
DO - 10.1557/JMR.1991.2264
LA - eng
M1 - 11
N1 - cited By 56
N2 - We have examined the atomic structure of growth interfaces in thin films of Y-Ba-Cu-O grown on [001] perovskite or cubic substrates. At substrate heater temperatures in the range of 780–820 °C c-axis oriented growth is observed on these substrates. On SrTi03, the first layer appears to be either a BaO or a CuO2plane while on LaA103the first layer appears to be a CuO chain layer. The mismatch on the a-b plane is accommodated by the formation of interface dislocations. Defects on the substrate surface propagate as defects in the film. These defects are primarily translational boundaries and in some cases second phases. At lower substrate heater temperatures, i.e., 650–700 °C, a, b-axis growth dominates. Defects and steps on the substrate surface are more detrimental in the growth of a, b-axis oriented films, since they tend to favor the nucleation of c-axis oriented domains. This is ascribed to the ledge mechanism of c-axis film growth, for which the surface steps are good nucleation sites. © 1991, Materials Research Society. All rights reserved.
PY - 1991
SP - 2264
EP - 2271
T2 - Journal of Materials Research
TI - The atomic structure of growth interfaces in Y-Ba-Cu-O thin films
VL - 6
SN - 08842914
ER -