TY - JOUR
KW - Molecular beam epitaxy
KW - Semiconducting gallium arsenide
KW - Electrons - Diffraction
KW - Magnetic Materials - Ferromagnetism
KW - Semiconductor Devices - Heterojunctions
KW - Aluminum Arsenide
KW - Manganese Aluminum Alloys
AU - J.P Harbison
AU - T Sands
AU - Ramamoorthy Ramesh
AU - L.T Florez
AU - B.J Wilkens
AU - V.G Keramidas
AB - Epitaxial ferromagnetic films of τ-MnAl in thickness from 3 to 60 nm have been successfully grown on AlAs/GaAs heterostructures using the molecular beam epitaxy (MBE) growth technique. This magnetic phase is a non-equilibrium metastable structure, stabilized in part by its close epitaxial registry with the underlying III-V semiconductor. The growth window is very narrow due to the metastability of the τ-phase. Growth has been achieved through the use of predeposited MnAl template layers of 1-3 bilayers, which effectively separate the nucleation and growth steps. Template formation and subsequent metal growth are monitored by reflection high energy electron diffraction (RHEED). RHEED has also been used to monitor preliminary attempts at III-V semiconductor overgrowth on the magnetic MnAl films. The data indicate that the overgrowth proceeds in a three-dimensional island growth mode of single crystal III-V semiconductor. © 1991.
BT - Journal of Crystal Growth
DO - 10.1016/0022-0248(91)91118-T
LA - eng
M1 - 1-4
N1 - cited By 31
N2 - Epitaxial ferromagnetic films of τ-MnAl in thickness from 3 to 60 nm have been successfully grown on AlAs/GaAs heterostructures using the molecular beam epitaxy (MBE) growth technique. This magnetic phase is a non-equilibrium metastable structure, stabilized in part by its close epitaxial registry with the underlying III-V semiconductor. The growth window is very narrow due to the metastability of the τ-phase. Growth has been achieved through the use of predeposited MnAl template layers of 1-3 bilayers, which effectively separate the nucleation and growth steps. Template formation and subsequent metal growth are monitored by reflection high energy electron diffraction (RHEED). RHEED has also been used to monitor preliminary attempts at III-V semiconductor overgrowth on the magnetic MnAl films. The data indicate that the overgrowth proceeds in a three-dimensional island growth mode of single crystal III-V semiconductor. © 1991.
PY - 1991
SP - 978
EP - 983
T2 - Journal of Crystal Growth
TI - MBE growth of ferromagnetic metastable epitaxial MnAl thin films on AlAs/GaAs heterostructures
VL - 111
SN - 00220248
ER -