TY - JOUR
AU - Ramamoorthy Ramesh
AU - A Inam
AU - B Wilkens
AU - W.K Chan
AU - T Sands
AU - J.M Tarascon
AU - D.K Fork
AU - T.H Geballe
AU - J Evans
AU - J Bullington
AB - The growth by pulsed-laser deposition of c-axis-oriented bismuth titanate (BTO)/YBa2Cu3O7(YBCO) superconductor heterostructures on [001]-oriented Si with epitaxial yttria-stabilized ZrO 2 as a buffer layer is reported. X-ray-diffraction studies of the heterostructures show that all the layers grow in the c-axis orientation, with a rocking angle of 1.0°-1.2°for the bismuth titanate layer and 0.6°-0.8°for the YBCO layer. Rutherford backscattering ion channeling yields of 28% at the surface have been obtained. Transmission electron microscopy of cross-sectioned samples reveal that the BTO layer has a significant density of translational boundaries that propagate at 45°to the film surface. The BTO film exhibits ferroelectric hysteresis and a dielectric constant in the range of 180-200.
BT - Applied Physics Letters
DO - 10.1063/1.106199
LA - eng
M1 - 14
N1 - cited By 49
N2 - The growth by pulsed-laser deposition of c-axis-oriented bismuth titanate (BTO)/YBa2Cu3O7(YBCO) superconductor heterostructures on [001]-oriented Si with epitaxial yttria-stabilized ZrO 2 as a buffer layer is reported. X-ray-diffraction studies of the heterostructures show that all the layers grow in the c-axis orientation, with a rocking angle of 1.0°-1.2°for the bismuth titanate layer and 0.6°-0.8°for the YBCO layer. Rutherford backscattering ion channeling yields of 28% at the surface have been obtained. Transmission electron microscopy of cross-sectioned samples reveal that the BTO layer has a significant density of translational boundaries that propagate at 45°to the film surface. The BTO film exhibits ferroelectric hysteresis and a dielectric constant in the range of 180-200.
PY - 1991
SP - 1782
EP - 1784
T2 - Applied Physics Letters
TI - Ferroelectric bismuth titanate/superconductor (Y-Ba-Cu-O) thin-film heterostructures on silicon
VL - 59
SN - 00036951
ER -