TY - JOUR
AU - Ramamoorthy Ramesh
AU - A Inam
AU - W.K Chan
AU - B Wilkens
AU - F Tillerot
AU - T Sands
AU - J.M Tarascon
AU - J Bullington
AU - J Evans
AB - Using a combination of pulsed laser deposition and sol-gel processing, we have fabricated epitaxial PbZr0.2Ti0.8O3/YBa2Cu3O7-x heterostructures on single crystalline [001] LaAlO3- Rutherford Backscattering studies show the composition to be the same as the nominal starting composition. Transmission electron microscopy shows the existence of a randomly oriented polycrystalline microstructure in the PZT layer with a grain size of about 500–1000Å. Microscopic pores were also observed in the PZT layer. The PZT film exhibits ferroelectric hysteresis with a saturation polarization of 22–25μC/cm2 (at 7.5V, 1kHz), a remanence of 5–6μC/cm2 and a coercive field of about 40kV/cm. © 1992, Taylor & Francis Group, LLC. All rights reserved.
BT - Integrated Ferroelectrics
DO - 10.1080/10584589208215712
LA - eng
M1 - 2-4
N1 - cited By 0
N2 - Using a combination of pulsed laser deposition and sol-gel processing, we have fabricated epitaxial PbZr0.2Ti0.8O3/YBa2Cu3O7-x heterostructures on single crystalline [001] LaAlO3- Rutherford Backscattering studies show the composition to be the same as the nominal starting composition. Transmission electron microscopy shows the existence of a randomly oriented polycrystalline microstructure in the PZT layer with a grain size of about 500–1000Å. Microscopic pores were also observed in the PZT layer. The PZT film exhibits ferroelectric hysteresis with a saturation polarization of 22–25μC/cm2 (at 7.5V, 1kHz), a remanence of 5–6μC/cm2 and a coercive field of about 40kV/cm. © 1992, Taylor & Francis Group, LLC. All rights reserved.
PY - 1992
SP - 205
EP - 212
T2 - Integrated Ferroelectrics
TI - Ferroelectric pbzr0.2ti0.8o3 thin films on epitaxial y-ba-cu-o
VL - 1
SN - 10584587
ER -