TY - JOUR
AU - A Walkenhorst
AU - C Doughty
AU - X.X Xi
AU - S.N Mao
AU - Q Li
AU - T Venkatesan
AU - Ramamoorthy Ramesh
AB - The dielectric constant of thin epitaxial SrTiO3 films used as dielectric layers in high Tc superconducting field-effect devices has been studied. in these thin films was found to have much weaker dependence on temperature and applied electric field than the bulk material. The breakdown characteristics of gate structures containing SrTiO3 dielectric layers are strongly influenced by the metal used as the gate electrode.
BT - Applied Physics Letters
DO - 10.1063/1.107204
LA - eng
M1 - 14
N1 - cited By 61
N2 - The dielectric constant of thin epitaxial SrTiO3 films used as dielectric layers in high Tc superconducting field-effect devices has been studied. in these thin films was found to have much weaker dependence on temperature and applied electric field than the bulk material. The breakdown characteristics of gate structures containing SrTiO3 dielectric layers are strongly influenced by the metal used as the gate electrode.
PY - 1992
SP - 1744
EP - 1746
T2 - Applied Physics Letters
TI - Dielectric properties of SrTiO3 thin films used in high T c superconducting field-effect devices
VL - 60
SN - 00036951
ER -