TY - CPAPER KW - Reliability KW - Thin films KW - Heterostructures KW - Ferroelectric materials KW - Ferroelectric devices KW - Capacitors KW - Lead zirconate titanate (PZT) KW - Semiconducting silicon KW - Lanthanum strontium cobalt oxide KW - Aging characteristics KW - Fatigue characteristics KW - Reliability testing AU - Ramamoorthy Ramesh AU - T Sands AU - V.G Keramidas AU - D.K Fork AU - Myers R AU - Tuttle Bruce A AU - Desu Seshu B AU - Larsen Poul K AB -

We report results of pulsed electrical testing of ferroelectric Pb0.9La0.1Zr0.2Ti0.8O3 thin film capacitors with symmetrical La-Sr-Co-O top and bottom electrodes at room temperatures and at 100°C. They have been grown on (001) Si with a Yttria stabilized zirconia (YSZ) buffer layer. A layered perovskite 'template' layer (200-300A thick), grown between the YSZ buffer layer and bottom La-Sr-Co-O electrode, is critical for obtaining the required orientation of the subsequent layers. When compared to the capacitors grown with Y-Ba-Cu-O (YBCO) top and bottom electrodes, these structures posses two advantages : (1) the growth temperatures are lower by 60-150DGRC; (ii) the capacitors show a large remnant polarization, AP, (ΔP = switched polarization- non-switched polarization), 25-30 μC/cm2, for an applied voltage of only 2V (applied field of 70 kV/cm). The fatigue, retention and aging characteristics of these new structures are excellent at both room temperature and at 100°C.

BT - Proceedings of the Materials Research Society Symposium - LA - eng N1 -

cited By 15

N2 -

We report results of pulsed electrical testing of ferroelectric Pb0.9La0.1Zr0.2Ti0.8O3 thin film capacitors with symmetrical La-Sr-Co-O top and bottom electrodes at room temperatures and at 100°C. They have been grown on (001) Si with a Yttria stabilized zirconia (YSZ) buffer layer. A layered perovskite 'template' layer (200-300A thick), grown between the YSZ buffer layer and bottom La-Sr-Co-O electrode, is critical for obtaining the required orientation of the subsequent layers. When compared to the capacitors grown with Y-Ba-Cu-O (YBCO) top and bottom electrodes, these structures posses two advantages : (1) the growth temperatures are lower by 60-150DGRC; (ii) the capacitors show a large remnant polarization, AP, (ΔP = switched polarization- non-switched polarization), 25-30 μC/cm2, for an applied voltage of only 2V (applied field of 70 kV/cm). The fatigue, retention and aging characteristics of these new structures are excellent at both room temperature and at 100°C.

PB - Publ by Materials Research Society, Pittsburgh, PA, United States PY - 1993 SP - 195 EP - 200 T2 - Proceedings of the Materials Research Society Symposium - T3 - Materials Research Society Symposium - TI - Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on silicon: reliability testing VL - 310 SN - 02729172 ER -