TY - JOUR
KW - Microstructure
KW - Thin films
KW - Ferroelectric materials
KW - Epitaxial growth
KW - Single crystals
KW - Lead compounds
KW - X-ray Analysis
KW - Digital storage
KW - Bipolar fatigue
AU - Ramamoorthy Ramesh
AU - T Sands
AU - V.G Keramidas
AU - D.K Fork
AB - Epitaxial ferroelectric Pb0.9La0.1Zr0.2Ti0.8O3 (PLZT) thin film capacitors with perovskite metal oxide electrodes (such as YBa2Cu3O7) were grown on single-crystal LaAlO3 and on buffered [100] Si. Structural studies using X-ray diffraction and transmission electron microscopy show that the PLZT layer is free of large-angle grain boundaries (i.e. it is single crystal like). Chemical analysis by Rutherford backscattering shows the composition of the PLZT layer to be close to that of the target. Ferroelectric hysteresis measurements using both pulsed measurements and a variable frequency Sawyer-Tower circuit yield remnant polarization values (at 5 V) in the range 10-30 μC cm-2 (depending on deposition conditions) with a coercive field in the range 35-80 kV cm-1. These heterostructures also show excellent resistance to bipolar fatigue, aging and logic state retention characteristics. © 1994.
BT - Materials Science and Engineering B
DO - 10.1016/0921-5107(94)90258-5
LA - eng
M1 - 2-3
N1 - cited By 47
N2 - Epitaxial ferroelectric Pb0.9La0.1Zr0.2Ti0.8O3 (PLZT) thin film capacitors with perovskite metal oxide electrodes (such as YBa2Cu3O7) were grown on single-crystal LaAlO3 and on buffered [100] Si. Structural studies using X-ray diffraction and transmission electron microscopy show that the PLZT layer is free of large-angle grain boundaries (i.e. it is single crystal like). Chemical analysis by Rutherford backscattering shows the composition of the PLZT layer to be close to that of the target. Ferroelectric hysteresis measurements using both pulsed measurements and a variable frequency Sawyer-Tower circuit yield remnant polarization values (at 5 V) in the range 10-30 μC cm-2 (depending on deposition conditions) with a coercive field in the range 35-80 kV cm-1. These heterostructures also show excellent resistance to bipolar fatigue, aging and logic state retention characteristics. © 1994.
PY - 1994
SP - 283
EP - 289
T2 - Materials Science and Engineering B
TI - Epitaxial ferroelectric thin films for memory applications
VL - 22
SN - 09215107
ER -