TY - JOUR
KW - Optimization
KW - Microstructure
KW - Thin films
KW - Sputter deposition
KW - Electrodes
KW - Hysteresis
KW - Lanthanum compounds
KW - Doping (additives)
KW - Lead compounds
KW - Capacitors
KW - Lead zirconate titanate (PZT)
KW - Fatigue of materials
KW - Imprint behavior
KW - Fatigue performance
KW - High density nonvolatile memory (HDNVM)
KW - Hysteresis loop characteristics
KW - Oxide electrode technology
AU - B.A Tuttle
AU - H.N Al-Shareef
AU - W.L Warren
AU - M.V Raymond
AU - T.J Headley
AU - J.A Voigt
AU - J Evans
AU - Ramamoorthy Ramesh
AB - Oxide electrode technology is investigated for optimization of Pb(Zr,Ti)O3 (PZT) thin film capacitor properties for high density nonvolatile memory applications. PZT thin film capacitors with RF sputter deposited La0.5Sr0.5CoO3 (LSCO) electrodes have been characterized with respect to the following parameters: initial dielectric hysteresis loop characteristics, fatigue performance, microstructure and imprint behavior. Our studies have determined that the fatigue of PZT capacitors with LSCO electrodes is less sensitive to B site cation ratio and underlying electrode stack technology than with RuO2 electrodes. Doping PZT thin films with Nb (PNZT) improves imprint behavior of LSCO//PZT//LSCO capacitors considerably. We have demonstrated that PNZT 4/30/70 // LSCO capacitors thermally processed at either 550°C or 675°C have almost identical initial hysteresis properties and exhibit essentially no fatigue out to approximately 1010 cycles. © 1995.
BT - Microelectronic Engineering
DO - 10.1016/0167-9317(95)00150-6
LA - eng
M1 - 1-4
N1 - cited By 12
N2 - Oxide electrode technology is investigated for optimization of Pb(Zr,Ti)O3 (PZT) thin film capacitor properties for high density nonvolatile memory applications. PZT thin film capacitors with RF sputter deposited La0.5Sr0.5CoO3 (LSCO) electrodes have been characterized with respect to the following parameters: initial dielectric hysteresis loop characteristics, fatigue performance, microstructure and imprint behavior. Our studies have determined that the fatigue of PZT capacitors with LSCO electrodes is less sensitive to B site cation ratio and underlying electrode stack technology than with RuO2 electrodes. Doping PZT thin films with Nb (PNZT) improves imprint behavior of LSCO//PZT//LSCO capacitors considerably. We have demonstrated that PNZT 4/30/70 // LSCO capacitors thermally processed at either 550°C or 675°C have almost identical initial hysteresis properties and exhibit essentially no fatigue out to approximately 1010 cycles. © 1995.
PY - 1995
SP - 223
EP - 230
T2 - Microelectronic Engineering
TI - La0.5Sr0.5CoO3 electrode technology for Pb(Zr,Ti)O3 thin film nonvolatile memories
VL - 29
SN - 01679317
ER -