TY - CPAPER
KW - Thin films
KW - Electrodes
KW - Silicon
KW - Substrates
KW - Hysteresis
KW - Ferroelectric materials
KW - Lead compounds
KW - Grain size and shape
KW - X-ray diffraction analysis
KW - Lead zirconate titanate thin films
KW - Titanium oxides
KW - Ferroelectric switching behavior
AU - Michael Eatough
AU - Duane Dimos
AU - Bruce Tuttle
AU - William Warren
AU - Ramamoorthy Ramesh
AB - Pb(Zr,Ti)O3 (PZT) thin films are being developed for use in optical and electronic memory devices. To study ferroelectric switching behavior, we have produced relatively untextured PZT thin films on Si substrates. We have developed a method for using x-ray diffraction to observe domain switching in situ. Our study involved the use of a micro-diffractometer to monitor the switching behavior in relatively small (0.7 mm diameter) electroded areas. Diffraction analyzes were done while DC voltages were applied and removed, representing several places in the hysteresis loop. In particular, we were looking for relative intensity changes in the [h 00],[00l] diffraction peaks as a function of position in the hysteresis loop. Our study indicates that the 90° domain switching exhibited by bulk ferroelectrics, is very limited in films on Si when grain sizes are less than about 1 μm.
BT - Proceedings of the Materials Research Society Symposium -
LA - eng
N1 - cited By 13
N2 - Pb(Zr,Ti)O3 (PZT) thin films are being developed for use in optical and electronic memory devices. To study ferroelectric switching behavior, we have produced relatively untextured PZT thin films on Si substrates. We have developed a method for using x-ray diffraction to observe domain switching in situ. Our study involved the use of a micro-diffractometer to monitor the switching behavior in relatively small (0.7 mm diameter) electroded areas. Diffraction analyzes were done while DC voltages were applied and removed, representing several places in the hysteresis loop. In particular, we were looking for relative intensity changes in the [h 00],[00l] diffraction peaks as a function of position in the hysteresis loop. Our study indicates that the 90° domain switching exhibited by bulk ferroelectrics, is very limited in films on Si when grain sizes are less than about 1 μm.
PB - Materials Research Society, Pittsburgh, PA, United States
PY - 1995
SP - 111
EP - 116
T2 - Proceedings of the Materials Research Society Symposium -
T3 - Materials Research Society Symposium -
TI - Study of switching behavior in Pb(Zr,Ti)O3 thin films using X-ray diffraction
VL - 361
SN - 02729172
ER -