TY - JOUR
AU - J Lee
AU - Ramamoorthy Ramesh
AU - V.G Keramidas
AU - D.K Fork
AB - Micron-scale (down to 2 μm lateral dimension) La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O ferroelectric capacitors for high density (> 1 Mbit) non-volatile memories have been successfully fabricated by a full wafer process including ion milling. Reduced dimensional effects as well as fabrication process damage on the micron-size capacitors have been studied. The remnant polarization value was only weakly dependent on the lateral dimension of ferroelectric capacitors. The reliability characteristics such as fatigue, retention and aging of the micron-scale ion milled capacitors were similar to those of the large capacitors, which is adequate for non-volatile memories. © 1995, Taylor & Francis Group, LLC. All rights reserved.
BT - Integrated Ferroelectrics
DO - 10.1080/10584589508012298
LA - eng
M1 - 1-2
N1 - cited By 4
N2 - Micron-scale (down to 2 μm lateral dimension) La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O ferroelectric capacitors for high density (> 1 Mbit) non-volatile memories have been successfully fabricated by a full wafer process including ion milling. Reduced dimensional effects as well as fabrication process damage on the micron-size capacitors have been studied. The remnant polarization value was only weakly dependent on the lateral dimension of ferroelectric capacitors. The reliability characteristics such as fatigue, retention and aging of the micron-scale ion milled capacitors were similar to those of the large capacitors, which is adequate for non-volatile memories. © 1995, Taylor & Francis Group, LLC. All rights reserved.
PY - 1995
SP - 35
EP - 44
T2 - Integrated Ferroelectrics
TI - Fabrication and testing of micron-size (pb,la)(zr,ti)o3 thin film capacitors
VL - 8
SN - 10584587
ER -