TY - JOUR
AU - J Lee
AU - Ramamoorthy Ramesh
AU - V.G Keramidas
AU - O Auciello
AB - Highly oriented La-Sr-Co-0(LSCO)/Pb-La-Zr-Ti-0(PLZT)/La-Sr-Co-O heterostructures have been successfully grown on a highly oriented Pt film which was grown on a thermally oxidized Si (SiO2/Si) substrate. The growth of oriented Pt film on the SiO2/Si substrate was made possible through the use of a thin bismuth titanate template layer which is c-axis oriented on the SiO2/Si substrate. The hybrid LSCO/Pt structure effectively reduced the sheet resistance of the electrodes by at least 3-5 times compared with a single LSCO electrode. These ferroelectric PLZT capacitors on Si exhibited symmetric hysteresis loops with very desirable ferroelectric properties. The test capacitors showed reliable performance at both room and high (100°C) temperatures with respect to fatigue, retention, aging, and imprint, suggesting that they can be used as reliable, nonvolatile memory elements. © 1995, Taylor & Francis Group, LLC. All rights reserved.
BT - Integrated Ferroelectrics
DO - 10.1080/10584589508012570
LA - eng
M1 - 4
N1 - cited By 4
N2 - Highly oriented La-Sr-Co-0(LSCO)/Pb-La-Zr-Ti-0(PLZT)/La-Sr-Co-O heterostructures have been successfully grown on a highly oriented Pt film which was grown on a thermally oxidized Si (SiO2/Si) substrate. The growth of oriented Pt film on the SiO2/Si substrate was made possible through the use of a thin bismuth titanate template layer which is c-axis oriented on the SiO2/Si substrate. The hybrid LSCO/Pt structure effectively reduced the sheet resistance of the electrodes by at least 3-5 times compared with a single LSCO electrode. These ferroelectric PLZT capacitors on Si exhibited symmetric hysteresis loops with very desirable ferroelectric properties. The test capacitors showed reliable performance at both room and high (100°C) temperatures with respect to fatigue, retention, aging, and imprint, suggesting that they can be used as reliable, nonvolatile memory elements. © 1995, Taylor & Francis Group, LLC. All rights reserved.
PY - 1995
SP - 317
EP - 333
T2 - Integrated Ferroelectrics
TI - Ferroelectric properties and reliability of La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on si for nonvolatile memory applications
VL - 9
SN - 10584587
ER -