TY - JOUR
AU - Ramamoorthy Ramesh
AU - V.G Keramidas
AB - This review provides an introduction to the idea of metal-oxide heterostructures. The potential application of metal-oxide heterostructures is demonstrated with the case study of ferroelectric nonvolatile memories, in which the ferroelectric stack contains a multicomponent metal oxide. The advantages of using metallic oxides as contact electrodes compared with conventional metal electrodes are demonstrated through results of reliability tests. Some novel ideas for the integration of multicomponent metallic oxides with conventional semiconductor electronics are also presented. Finally, a short discussion of the evolution of the general field of metal-oxide heterostructures is provided.
BT - Annual Review of Materials Science
DO - 10.1146/annurev.ms.25.080195.003243
LA - eng
M1 - 1
N1 - cited By 21
N2 - This review provides an introduction to the idea of metal-oxide heterostructures. The potential application of metal-oxide heterostructures is demonstrated with the case study of ferroelectric nonvolatile memories, in which the ferroelectric stack contains a multicomponent metal oxide. The advantages of using metallic oxides as contact electrodes compared with conventional metal electrodes are demonstrated through results of reliability tests. Some novel ideas for the integration of multicomponent metallic oxides with conventional semiconductor electronics are also presented. Finally, a short discussion of the evolution of the general field of metal-oxide heterostructures is provided.
PB - Annual Reviews Inc.
PY - 1995
SP - 647
EP - 678
T2 - Annual Review of Materials Science
TI - Metal-oxide heterostructures
VL - 25
SN - 00846600
ER -