TY - JOUR
AU - Z Trajanovic
AU - C Kwon
AU - M.C Robson
AU - K.-C Kim
AU - M Rajeswari
AU - Ramamoorthy Ramesh
AU - T Venkatesan
AU - S.E Lofland
AU - S.M Bhagat
AU - D Fork
AB - We are able to grow high quality La0.67Sr0.33MnO3(LSMO) colossal magnetoresistive (CMR) thin films on Y-stabilized zirconia (YSZ) buffered (100) Si substrates using a Bi4Ti3O12 texturing and lattice matching layer. The CMR films have very high structural perfection and show excellent transport and ferromagnetic properties, including the almost full saturation magnetization values and narrow ferromagnetic resonance peaks (15 Oe at 290 K). The lattice matching template/buffer layer approach is suitable for the high quality CMR films on Si. A close correlation between the magnetic hysteresis loop and the field dependence of MR is observed at lower temperatures. © 1996 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.117967
LA - eng
M1 - 7
N1 - cited By 97
N2 - We are able to grow high quality La0.67Sr0.33MnO3(LSMO) colossal magnetoresistive (CMR) thin films on Y-stabilized zirconia (YSZ) buffered (100) Si substrates using a Bi4Ti3O12 texturing and lattice matching layer. The CMR films have very high structural perfection and show excellent transport and ferromagnetic properties, including the almost full saturation magnetization values and narrow ferromagnetic resonance peaks (15 Oe at 290 K). The lattice matching template/buffer layer approach is suitable for the high quality CMR films on Si. A close correlation between the magnetic hysteresis loop and the field dependence of MR is observed at lower temperatures. © 1996 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1996
SP - 1005
EP - 1007
T2 - Applied Physics Letters
TI - Growth of colossal magnetoresistance thin films on silicon
VL - 69
SN - 00036951
ER -