TY - JOUR
AU - C.-H Chen
AU - V Talyansky
AU - C Kwon
AU - M Rajeswari
AU - R.P Sharma
AU - Ramamoorthy Ramesh
AU - T Venkatesan
AU - J Melngailis
AU - Z Zhang
AU - W.K Chu
AB - Thin films of colossal magnetoresistance (MR) material, La0.67Ca0.33MnO3, were implanted with different doses (1011-1015 ions/cm2) of 200 keV Ar+ ions. The implanted samples were examined by ion channeling and x-ray diffraction techniques. The channeling results clearly showed that the magnitude of the induced lattice disorder did not increase greatly for implantation doses up to 5×1013 ions/cm2. In this low dose implantation regime, the magnetoresistance MR=[R(0)-R(H)]/R(0) increased by 50%, the peak resistivity went up by two orders of magnitude, and the magnetoresistivity peak temperature decreased by 130 K compared to the original, unimplanted sample. For doses ≥5×1013 ions/cm2, the damage was significant and caused the sample to become semiconducting. © 1996 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.117314
LA - eng
M1 - 20
N1 - cited By 41
N2 - Thin films of colossal magnetoresistance (MR) material, La0.67Ca0.33MnO3, were implanted with different doses (1011-1015 ions/cm2) of 200 keV Ar+ ions. The implanted samples were examined by ion channeling and x-ray diffraction techniques. The channeling results clearly showed that the magnitude of the induced lattice disorder did not increase greatly for implantation doses up to 5×1013 ions/cm2. In this low dose implantation regime, the magnetoresistance MR=[R(0)-R(H)]/R(0) increased by 50%, the peak resistivity went up by two orders of magnitude, and the magnetoresistivity peak temperature decreased by 130 K compared to the original, unimplanted sample. For doses ≥5×1013 ions/cm2, the damage was significant and caused the sample to become semiconducting. © 1996 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1996
SP - 3089
EP - 3091
T2 - Applied Physics Letters
TI - Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3
VL - 69
SN - 00036951
ER -