TY - JOUR
AU - J.Y Gu
AU - C Kwon
AU - M.C Robson
AU - Z Trajanovic
AU - K Ghosh
AU - R.P Sharma
AU - R Shreekala
AU - M Rajeswari
AU - T Venkatesan
AU - Ramamoorthy Ramesh
AU - T.W Noh
AB - c-axis textured La0.7Sr0.3MnO3-δ(LSMO) films were fabricated on SiO2/Si(001) substrates using a Bi4Ti3O12 (BTO) template layer. Electrical and magnetic properties of LSMO were investigated. The LSMO/BTO layer of this structure has no in-plane alignment. Even though a ferromagnetic transition temperature, Tc, is as high as that of the epitaxial LSMO film (360 K), a resistivity peak temperature, TP, is about 140 K lower than Tc, The resistivity behavior as a function of temperature for LSMO/BTO/SiO2/Si films is found to be dominated by grain boundary effects. Low field sensitive magnetoresistance which suggests spin tunneling through the grain boundaries is also observed at room temperature. © 1997 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.118649
LA - eng
M1 - 13
N1 - cited By 55
N2 - c-axis textured La0.7Sr0.3MnO3-δ(LSMO) films were fabricated on SiO2/Si(001) substrates using a Bi4Ti3O12 (BTO) template layer. Electrical and magnetic properties of LSMO were investigated. The LSMO/BTO layer of this structure has no in-plane alignment. Even though a ferromagnetic transition temperature, Tc, is as high as that of the epitaxial LSMO film (360 K), a resistivity peak temperature, TP, is about 140 K lower than Tc, The resistivity behavior as a function of temperature for LSMO/BTO/SiO2/Si films is found to be dominated by grain boundary effects. Low field sensitive magnetoresistance which suggests spin tunneling through the grain boundaries is also observed at room temperature. © 1997 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1997
SP - 1763
EP - 1765
T2 - Applied Physics Letters
TI - Growth and properties of c-axis textured La0.7Sr0.3MnO3-δ films on SiO2/Si substrates with a Bi4Ti3O12 template layer
VL - 70
SN - 00036951
ER -