TY - JOUR
KW - Semiconductor
KW - Article
KW - Priority journal
KW - Electron transport
KW - Chemical composition
KW - Computer memory
AU - S Mathews
AU - Ramamoorthy Ramesh
AU - T Venkatesan
AU - J Benedetto
AB - Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be 'tuned' by varying the manganate stochiometry. A device with La0.7Ca0.3MnO3 as the semiconductor and PbZr0.2Ti0.8O3 as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.
BT - Science
DO - 10.1126/science.276.5310.238
LA - eng
M1 - 5310
N1 - cited By 491
N2 - Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be 'tuned' by varying the manganate stochiometry. A device with La0.7Ca0.3MnO3 as the semiconductor and PbZr0.2Ti0.8O3 as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.
PY - 1997
SP - 238
EP - 240
T2 - Science
TI - Ferroelectric field effect transistor based on epitaxial perovskite heterostructures
VL - 276
SN - 00368075
ER -