TY - JOUR
KW - Magnetoresistance
KW - Yttrium compounds
KW - Lanthanum compounds
KW - Polarization
KW - High temperature superconductors
KW - Heterojunctions
KW - Neodymium compounds
KW - Spin dynamics
KW - Critical current density (superconductivity)
KW - Electron transport properties
KW - Superconducting devices
KW - Electric conductivity measurement
KW - Gain measurement
KW - Magnetic relaxation
KW - Equilibrium density of pairs
KW - Joule heating
KW - Spin polarized quasiparticle injection device
KW - Transport measurement
AU - Z.W Dong
AU - Ramamoorthy Ramesh
AU - T Venkatesan
AU - M Johnson
AU - Z.Y Chen
AU - S.P Pai
AU - V Talyansky
AU - R.P Sharma
AU - R Shreekala
AU - C.J Lobb
AU - R.L Greene
AB - Oxide heterostructures were used for studies of quasiparticle injection effects in high-Tc superconducting thin films. The effect of injection of spin polarized quasiparticles from a ferromagnetic gate layer was compared to that of unpolarized quasiparticles from a nonmagnetic metallic gate. Transport measurements of the superconducting layer showed strong suppression in the supercurrent by the injection of spin-polarized quasiparticles, and a current gain of as large as five was attained. This is 10 to 30 times larger than the gain of unpolarized injection devices. Such large effects could be useful in a variety of active high-Tc superconductor/colossal magnetoresistance heterostructure based devices. © 1997 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.120014
LA - eng
M1 - 12
N1 - cited By 157
N2 - Oxide heterostructures were used for studies of quasiparticle injection effects in high-Tc superconducting thin films. The effect of injection of spin polarized quasiparticles from a ferromagnetic gate layer was compared to that of unpolarized quasiparticles from a nonmagnetic metallic gate. Transport measurements of the superconducting layer showed strong suppression in the supercurrent by the injection of spin-polarized quasiparticles, and a current gain of as large as five was attained. This is 10 to 30 times larger than the gain of unpolarized injection devices. Such large effects could be useful in a variety of active high-Tc superconductor/colossal magnetoresistance heterostructure based devices. © 1997 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1997
SP - 1718
EP - 1720
T2 - Applied Physics Letters
TI - Spin-polarized quasiparticle injection devices using Au/YBa2Cu3O7/LaAIO3/Nd 0.7Sr0.3MnO3 heterostructures
VL - 71
SN - 00036951
ER -