TY - JOUR
AU - A Goyal
AU - M Rajeswari
AU - R Shreekala
AU - S.E Lofland
AU - S.M Bhagat
AU - T Boettcher
AU - C Kwon
AU - Ramamoorthy Ramesh
AU - T Venkatesan
AB - We are optimizing thin films of perovskite manganese oxides for bolometric applications. We have studied the relevant material characteristics of several members of this family namely, La0.7Ba0.3MnO3, La0.7Sr0.3MnO3, La0.7Ca0.3MnO3, and Nd0.7Sr0.3MnO3. Here, we discuss issues related to the choice of material, the influence of deposition parameters, and postdeposition heat treatments on the relevant characteristics such as the resistivity-peak temperature (Tp) and the temperature coefficient of resistance (TCR). For a given material, a higher peak temperature implies a larger temperature coefficient of resistance. In contrast, on comparing different material systems, the TCR tends to decrease as Tp, increases. © 1997 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.120427
LA - eng
M1 - 17
N1 - cited By 213
N2 - We are optimizing thin films of perovskite manganese oxides for bolometric applications. We have studied the relevant material characteristics of several members of this family namely, La0.7Ba0.3MnO3, La0.7Sr0.3MnO3, La0.7Ca0.3MnO3, and Nd0.7Sr0.3MnO3. Here, we discuss issues related to the choice of material, the influence of deposition parameters, and postdeposition heat treatments on the relevant characteristics such as the resistivity-peak temperature (Tp) and the temperature coefficient of resistance (TCR). For a given material, a higher peak temperature implies a larger temperature coefficient of resistance. In contrast, on comparing different material systems, the TCR tends to decrease as Tp, increases. © 1997 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1997
SP - 2535
EP - 2537
T2 - Applied Physics Letters
TI - Material characteristics of perovskite manganese oxide thin films for bolometric applications
VL - 71
SN - 00036951
ER -