TY - CPAPER
KW - Microstructure
KW - Thin films
KW - Titanium compounds
KW - Ferroelectric materials
KW - Textures
KW - Coercive force
KW - Domain structure
KW - Correlation methods
KW - Ceramic capacitors
AU - H Li
AU - B Yang
AU - A Dhote
AU - S Aggarwal
AU - L Salamanca-Riba
AU - Ramamoorthy Ramesh
AB - Epitaxial 0%, 3% and 10% La doped PZT capacitors with a LSCO bottom electrode grown by pulsed laser deposition on Si using a Ti(Al)N/Pt conducting barrier layer were systematically studied. Ferroelectric capacitors substituted with 10% La show a significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to the systematic variation of the domain structure of the PLZT film with the increase of La concentration. The in-plane orientation relationship of this heterostructure is: [110]PLZT//[110]LSCO//[110]Pt// [110]Ti(Al)N//[110]Si. The morphology of the domains as a function of La concentration was studied using high resolution transmission electron microscopy(HREM). The Pt/Ti(Al)N conducting barrier layer stack is intact after the deposition of the LSCO/PLZT/LSCO stack. All Ti(Al)N layers in the samples studied consist of column-like structures with a [110] texture.
BT - Proceedings of the Materials Research Society Symposium -
LA - eng
N1 - cited By 1
N2 - Epitaxial 0%, 3% and 10% La doped PZT capacitors with a LSCO bottom electrode grown by pulsed laser deposition on Si using a Ti(Al)N/Pt conducting barrier layer were systematically studied. Ferroelectric capacitors substituted with 10% La show a significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to the systematic variation of the domain structure of the PLZT film with the increase of La concentration. The in-plane orientation relationship of this heterostructure is: [110]PLZT//[110]LSCO//[110]Pt// [110]Ti(Al)N//[110]Si. The morphology of the domains as a function of La concentration was studied using high resolution transmission electron microscopy(HREM). The Pt/Ti(Al)N conducting barrier layer stack is intact after the deposition of the LSCO/PLZT/LSCO stack. All Ti(Al)N layers in the samples studied consist of column-like structures with a [110] texture.
PB - MRS, Warrendale, PA, United States
PY - 1998
SP - 171
EP - 176
T2 - Proceedings of the Materials Research Society Symposium -
T3 - Materials Research Society Symposium -
TI - Microstructure investigations and structure-property correlations in ferroelectric thin-film capacitors
VL - 493
SN - 02729172
ER -