TY - JOUR
AU - M Rajeswari
AU - R Shreekala
AU - A Goyal
AU - S.E Lofland
AU - S.M Bhagat
AU - K Ghosh
AU - R.P Sharma
AU - R.L Greene
AU - Ramamoorthy Ramesh
AU - T Venkatesan
AU - T Boettcher
AB - Perovskite manganese oxide materials known for the phenomenon of colossal magnetoresistance often exhibit anomalously large 1/f noise and large, temperature-dependent ferromagnetic resonance (FMR) linewidths. We show that in epitaxial films, these anomalies are very sensitive to oxygen partial pressure during film growth and to postdeposition thermal processing in oxygen, suggesting that oxygen stoichiometry plays a key role. We find that the temperature coefficient of resistance (TCR) at the metal-insulator transition increases and the FMR linewidth decreases as we increase the oxygen partial pressure during growth. Postdeposition heat treatment in oxygen leads to further increase in TCR and decrease in FMR linewidth, accompanied by a dramatic reduction in 1/f noise magnitudes. © 1998 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.122549
LA - eng
M1 - 18
N1 - cited By 102
N2 - Perovskite manganese oxide materials known for the phenomenon of colossal magnetoresistance often exhibit anomalously large 1/f noise and large, temperature-dependent ferromagnetic resonance (FMR) linewidths. We show that in epitaxial films, these anomalies are very sensitive to oxygen partial pressure during film growth and to postdeposition thermal processing in oxygen, suggesting that oxygen stoichiometry plays a key role. We find that the temperature coefficient of resistance (TCR) at the metal-insulator transition increases and the FMR linewidth decreases as we increase the oxygen partial pressure during growth. Postdeposition heat treatment in oxygen leads to further increase in TCR and decrease in FMR linewidth, accompanied by a dramatic reduction in 1/f noise magnitudes. © 1998 American Institute of Physics.
PY - 1998
SP - 2672
EP - 2674
T2 - Applied Physics Letters
TI - Correlation between magnetic homogeneity, oxygen content, and electrical and magnetic properties of perovskite manganite thin films
VL - 73
SN - 00036951
ER -