TY - JOUR
AU - J Lettieri
AU - Y Jia
AU - M Urbanik
AU - C.I Weber
AU - J-P Maria
AU - D.G Schlom
AU - H Li
AU - Ramamoorthy Ramesh
AU - R Uecker
AU - P Reiche
AB - Epitaxial SrBi2Ta2O9 thin films have been grown with (001) and (110) orientations by pulsed laser deposition on (001) LaAlO3-Sr2AlTaO6 and (100) LaSrAlO4 substrates, respectively. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase pure epitaxial films. Minimization of surface mesh mismatch between the film and substrate (i.e., choice of appropriate substrate material and orientation) was used to stabilize the desired orientations and achieve epitaxial growth. © 1998 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.122631
LA - eng
M1 - 20
N1 - cited By 73
N2 - Epitaxial SrBi2Ta2O9 thin films have been grown with (001) and (110) orientations by pulsed laser deposition on (001) LaAlO3-Sr2AlTaO6 and (100) LaSrAlO4 substrates, respectively. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase pure epitaxial films. Minimization of surface mesh mismatch between the film and substrate (i.e., choice of appropriate substrate material and orientation) was used to stabilize the desired orientations and achieve epitaxial growth. © 1998 American Institute of Physics.
PY - 1998
SP - 2923
EP - 2925
T2 - Applied Physics Letters
TI - Epitaxial growth of (001)-oriented and (110)-oriented SrBi2Ta2O9 thin films
VL - 73
SN - 00036951
ER -