TY - JOUR
KW - Thin films
KW - Annealing
KW - Raman scattering
KW - Laser ablation
KW - Magnetoresistance
KW - Substrates
KW - Oxygen
KW - Raman spectroscopy
KW - Phonons
KW - Magnetization
KW - Temperature dependence
KW - Magnetoresistance manganite films
AU - V.B Podobedov
AU - D.B Romero
AU - A Weber
AU - J.P Rice
AU - R Schreekala
AU - M Rajeswari
AU - Ramamoorthy Ramesh
AU - T Venkatesan
AU - H.D Drew
AB - Polarized Raman scattering by phonons is used to characterize thin films prepared by laser ablation of La1-xCaxMnO3 targets. It was found that, in the temperature range from 6 to 300 K, phonon spectra of La0.7Ca0.3MnO3 films exhibit observable differences from those in bulk materials (microcrystalline ceramics and single crystals). A significant difference was found in the spectra of "as-grown" films compared to those annealed in oxygen at 800°C. The observed Raman peaks and their linewidths exhibit an irregular temperature dependence near Tc. A correlation of Raman data with magnetization of the sample was also found. © 1998 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.122723
LA - eng
M1 - 22
N1 - cited By 45
N2 - Polarized Raman scattering by phonons is used to characterize thin films prepared by laser ablation of La1-xCaxMnO3 targets. It was found that, in the temperature range from 6 to 300 K, phonon spectra of La0.7Ca0.3MnO3 films exhibit observable differences from those in bulk materials (microcrystalline ceramics and single crystals). A significant difference was found in the spectra of "as-grown" films compared to those annealed in oxygen at 800°C. The observed Raman peaks and their linewidths exhibit an irregular temperature dependence near Tc. A correlation of Raman data with magnetization of the sample was also found. © 1998 American Institute of Physics.
PY - 1998
SP - 3217
EP - 3219
T2 - Applied Physics Letters
TI - Diagnostics of "colossal" magnetoresistance manganite films by Raman spectroscopy
VL - 73
SN - 00036951
ER -