TY - CPAPER
KW - Cooling
KW - Thin films
KW - Film growth
KW - Oxygen
KW - Ferroelectric materials
KW - Lanthanum
KW - Doping (additives)
KW - Lead compounds
KW - Crystal defects
KW - Partial pressure
KW - Doppler effect
KW - Positron annihilation
KW - Dielectric films
KW - Vacancy-related defects
AU - T Friessnegg
AU - S Aggarwal
AU - B Nielsen
AU - Ramamoorthy Ramesh
AU - D.J Keeble
AU - E.H Poindexter
AB - The formation of vacancy-type defects in Pb(1-x)Lax(Zr0.2Ti0.8)O3 (PLZT) thin films was studied as a function of lanthanum doping x and after cooling in an oxygen reduced ambient. The Doppler-broadening S parameter indicates that Pb-vacancies are progressively introduced upon La-doping. Cooling of Pb(Zr0.2Ti0.8)O3 and Pb0.9La0.1(Zr0.2Ti0.8)O3 thin films in 10-5 Torr oxygen partial pressure after growth exhibits an increase in the density of vacancy type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are lead-oxygen vacancy complexes.
BT - IEEE International Symposium on Applications of Ferroelectrics
LA - eng
N1 - cited By 2
N2 - The formation of vacancy-type defects in Pb(1-x)Lax(Zr0.2Ti0.8)O3 (PLZT) thin films was studied as a function of lanthanum doping x and after cooling in an oxygen reduced ambient. The Doppler-broadening S parameter indicates that Pb-vacancies are progressively introduced upon La-doping. Cooling of Pb(Zr0.2Ti0.8)O3 and Pb0.9La0.1(Zr0.2Ti0.8)O3 thin films in 10-5 Torr oxygen partial pressure after growth exhibits an increase in the density of vacancy type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are lead-oxygen vacancy complexes.
PB - IEEE, Piscataway, NJ, United States
PY - 1998
SP - 147
EP - 150
T2 - IEEE International Symposium on Applications of Ferroelectrics
T3 - IEEE International Symposium on Applications of Ferroelectrics
TI - Investigation of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation
ER -