TY - CPAPER
KW - Annealing
KW - Mass spectrometry
KW - Hydrogen
KW - Degradation
KW - Electric properties
KW - Raman spectroscopy
KW - Ferroelectric materials
KW - Thin film devices
KW - Strontium compounds
KW - Capacitors
KW - Semiconducting lead compounds
KW - X-ray diffraction analysis
KW - Ion scattering
KW - Composition effects
KW - Hydrogen annealing
KW - Mass spectroscopy of recoiled ions
KW - Pulsed ion beam surface characterization
KW - Surface analysis
AU - A.R Krauss
AU - A Dhote
AU - O Auciello
AU - J Im
AU - Ramamoorthy Ramesh
AU - S Aggarwal
AB - The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechanisms of degradation are different. We have used Mass spectroscopy of recoiled ions (MSRI), X-ray diffraction (XRD), Raman spectroscopy and electrical characterization to study the mechanisms of hydrogen-induced degradation in these two materials. The mechanism responsible for degradation in SBT during hydrogen annealing appears to be hydrogen-induced volatilization of Bi from the near-surface region during film growth. Although there is a similar, but smaller, loss of Pb in PZT, the resulting change in stoichiometry is not responsible for the degradation of the ferroelectric properties. Raman spectroscopy reveals that PZT films exposed to hydrogen exhibit evidence for the formation of polar hydroxyl [OH-] bonds, which can block the movement of ions in the lattice and inhibit polarization. The possible sites for the incorporation of hydrogen are discussed in terms of ionic radii, and crystal structure.
BT - Integrated Ferroelectrics
DO - 10.1080/10584589908228464
LA - eng
M1 - 1
N1 - cited By 2
N2 - The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechanisms of degradation are different. We have used Mass spectroscopy of recoiled ions (MSRI), X-ray diffraction (XRD), Raman spectroscopy and electrical characterization to study the mechanisms of hydrogen-induced degradation in these two materials. The mechanism responsible for degradation in SBT during hydrogen annealing appears to be hydrogen-induced volatilization of Bi from the near-surface region during film growth. Although there is a similar, but smaller, loss of Pb in PZT, the resulting change in stoichiometry is not responsible for the degradation of the ferroelectric properties. Raman spectroscopy reveals that PZT films exposed to hydrogen exhibit evidence for the formation of polar hydroxyl [OH-] bonds, which can block the movement of ions in the lattice and inhibit polarization. The possible sites for the incorporation of hydrogen are discussed in terms of ionic radii, and crystal structure.
PB - Gordon & Breach Science Publ Inc, Newark
PY - 1999
SP - 147
EP - 157
T2 - Integrated Ferroelectrics
T3 - Integrated Ferroelectrics
TI - Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors
VL - 27
SN - 10584587
ER -