TY - JOUR
AU - S.R Shinde
AU - S.E Lofland
AU - C.S Ganpule
AU - S.M Bhagat
AU - S.B Ogale
AU - Ramamoorthy Ramesh
AU - T Venkatesan
AB - We report on the effects of using SrFe7Al5O19 as a buffer layer for growth of high-quality epitaxial barium-ferrite thin films on sapphire substrates. X-ray diffraction studies reveal that the buffer layer causes the interfacial strains in the barium-ferrite films to relax. As a result, the ferromagnetic resonance linewidth decreases even in the as-deposited case. However, the more striking result is the drastic reduction in the linewidth that occurs when the barium-ferrite film is deposited on the buffer layer and subsequently annealed at 1000°C for 2 h, allowing the observation of a large number of spin-wave resonances (up to the 15th mode), indicating an improvement in both the surface and interface characteristics. © 1999 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.123156
LA - eng
M1 - 4
N1 - cited By 23
N2 - We report on the effects of using SrFe7Al5O19 as a buffer layer for growth of high-quality epitaxial barium-ferrite thin films on sapphire substrates. X-ray diffraction studies reveal that the buffer layer causes the interfacial strains in the barium-ferrite films to relax. As a result, the ferromagnetic resonance linewidth decreases even in the as-deposited case. However, the more striking result is the drastic reduction in the linewidth that occurs when the barium-ferrite film is deposited on the buffer layer and subsequently annealed at 1000°C for 2 h, allowing the observation of a large number of spin-wave resonances (up to the 15th mode), indicating an improvement in both the surface and interface characteristics. © 1999 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1999
SP - 594
EP - 596
T2 - Applied Physics Letters
TI - Improvement in spin-wave resonance characteristics of epitaxial barium-ferrite thin films by using an aluminum-doped strontium-ferrite buffer layer
VL - 74
SN - 00036951
ER -