TY - JOUR
AU - B.R Chalamala
AU - Y Wei
AU - R.H Reuss
AU - S Aggarwal
AU - B.E Gnade
AU - Ramamoorthy Ramesh
AU - J.M Bernhard
AU - E.D Sosa
AU - D.E Golden
AB - The effect of thermal growth conditions on the morphology and surface work function of iridium oxide thin films grown by annealing Ir thin films in an O2 ambient is presented. The samples were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and photoelectric work function measurements. It is found that, with increasing temperature, IrO2 changes from (110) oriented to a mixture of (110) and (200) during the oxide growth. This is manifested as a sharpening of the photoelectric energy distributions at 800°C. The surface work function was determined to be 4.23 eV using ultraviolet photoelectron spectroscopy. X-ray photoelectron spectroscopy analysis shows that IrO2 starts to form at 600°C accompanied by surface roughening. Annealing the Ir film at 900°C in O2 ambient leads to almost complete desorption of the film. © 1999 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.123561
LA - eng
M1 - 10
N1 - cited By 73
N2 - The effect of thermal growth conditions on the morphology and surface work function of iridium oxide thin films grown by annealing Ir thin films in an O2 ambient is presented. The samples were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and photoelectric work function measurements. It is found that, with increasing temperature, IrO2 changes from (110) oriented to a mixture of (110) and (200) during the oxide growth. This is manifested as a sharpening of the photoelectric energy distributions at 800°C. The surface work function was determined to be 4.23 eV using ultraviolet photoelectron spectroscopy. X-ray photoelectron spectroscopy analysis shows that IrO2 starts to form at 600°C accompanied by surface roughening. Annealing the Ir film at 900°C in O2 ambient leads to almost complete desorption of the film. © 1999 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1999
SP - 1394
EP - 1396
T2 - Applied Physics Letters
TI - Effect of growth conditions on surface morphology and photoelectric work function characteristics of iridium oxide thin films
VL - 74
SN - 00036951
ER -