TY - JOUR
AU - D.E Steinhauer
AU - C.P Vlahacos
AU - F.C Wellstood
AU - S.M Anlage
AU - C Canedy
AU - Ramamoorthy Ramesh
AU - A Stanishevsky
AU - J Melngailis
AB - We describe the use of a near-field scanning microwave microscope to quantitatively image the dielectric permittivity and tunability of thin-film dielectric samples on a length scale of 1 μm. We demonstrate this technique with permittivity images and local hysteresis loops of a 370-nm-thick Ba0.6Sr0.4TiO3 thin film at 7.2 GHz. We also observe the role of annealing in the recovery of dielectric tunability in a damaged region of the thin film. We can measure changes in relative permittivity εr as small as 2 at εr = 500, and changes in dielectric tunability dεr/dV as small as 0.03 V-1. © 1999 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.125270
LA - eng
M1 - 20
N1 - cited By 73
N2 - We describe the use of a near-field scanning microwave microscope to quantitatively image the dielectric permittivity and tunability of thin-film dielectric samples on a length scale of 1 μm. We demonstrate this technique with permittivity images and local hysteresis loops of a 370-nm-thick Ba0.6Sr0.4TiO3 thin film at 7.2 GHz. We also observe the role of annealing in the recovery of dielectric tunability in a damaged region of the thin film. We can measure changes in relative permittivity εr as small as 2 at εr = 500, and changes in dielectric tunability dεr/dV as small as 0.03 V-1. © 1999 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1999
SP - 3180
EP - 3182
T2 - Applied Physics Letters
TI - Imaging of microwave permittivity, tunability, and damage recover in (Ba, Sr)TiO3 thin films
VL - 75
SN - 00036951
ER -