TY - JOUR
AU - C.S Ganpule
AU - A Stanishevsky
AU - S Aggarwal
AU - J Melngailis
AU - E Williams
AU - Ramamoorthy Ramesh
AU - V Joshi
AU - C. Paz De Araujo
AB - Scaling of the ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films was studied. Focused ion beam milling was used to fabricate submicron devices (1 × 1, 0.5 × 0.5, 0.25 × 0.25, 0.09 × 0.09, and 0.07 × 0.07 μm2) and scanning force microscopy was used to examine their piezoelectric response. It was found that capacitors as small as 0.09 × 0.09 μm2 exhibit good piezoelectric/ferroelectric properties and that submicron (0.25 × 0.25 μm2) capacitors show resistance to bipolar fatigue with up to at least 109 cycles. The results were compared with similar capacitor structures milled in the Pb1.0(Nb0.04Zr0.28Ti0.68)O 3 system where structures as small as 0.07 × 0.07 μm2 were analyzed. © 1999 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.125485
LA - eng
M1 - 24
N1 - cited By 88
N2 - Scaling of the ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films was studied. Focused ion beam milling was used to fabricate submicron devices (1 × 1, 0.5 × 0.5, 0.25 × 0.25, 0.09 × 0.09, and 0.07 × 0.07 μm2) and scanning force microscopy was used to examine their piezoelectric response. It was found that capacitors as small as 0.09 × 0.09 μm2 exhibit good piezoelectric/ferroelectric properties and that submicron (0.25 × 0.25 μm2) capacitors show resistance to bipolar fatigue with up to at least 109 cycles. The results were compared with similar capacitor structures milled in the Pb1.0(Nb0.04Zr0.28Ti0.68)O 3 system where structures as small as 0.07 × 0.07 μm2 were analyzed. © 1999 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1999
SP - 3874
EP - 3876
T2 - Applied Physics Letters
TI - Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films
VL - 75
SN - 00036951
ER -