TY - JOUR
AU - V Nagarajan
AU - S.P Alpay
AU - C.S Ganpule
AU - B.K Nagaraj
AU - S Aggarwal
AU - E.D Williams
AU - A.L Roytburd
AU - Ramamoorthy Ramesh
AB - The effect of various substrates on the electrical and electromechanical properties of 100-nm-thick epitaxial [formula omitted] thin films is investigated. (001) 0.9PMN–0.1PT films are grown on [formula omitted] [formula omitted] [formula omitted] and MgO substrates with 40-nm-thick top and bottom [formula omitted] electrodes by pulsed laser deposition. X-ray diffraction results indicate that the films on LAO, LSAT, and STO are stressed biaxially in compression in the film-substrate interface whereas the films on MgO are stressed in tension. A decrease in the temperature of dielectric maximum [formula omitted] together with an increase in the dielectric constant and the longitudinal piezomodulus is observed with decreasing in-plane epitaxial stresses for LAO, LSAT, and STO substrates. The films on MgO substrates have the highest dielectric constant and piezomodulus with [formula omitted] below room temperature. The variation in [formula omitted] may be attributed to the shift in the transformation temperature from the paraelectric state to the relaxor state due to internal stresses in the film-substrate interface. Electrical and electromechanical properties should depend strongly on internal stresses in the vicinity of the phase transformation, which is reflected in our experimental observations. © 2000, American Institute of Physics. All rights reserved.
BT - Applied Physics Letters
DO - 10.1063/1.127002
LA - eng
M1 - 3
N1 - cited By 103
N2 - The effect of various substrates on the electrical and electromechanical properties of 100-nm-thick epitaxial [formula omitted] thin films is investigated. (001) 0.9PMN–0.1PT films are grown on [formula omitted] [formula omitted] [formula omitted] and MgO substrates with 40-nm-thick top and bottom [formula omitted] electrodes by pulsed laser deposition. X-ray diffraction results indicate that the films on LAO, LSAT, and STO are stressed biaxially in compression in the film-substrate interface whereas the films on MgO are stressed in tension. A decrease in the temperature of dielectric maximum [formula omitted] together with an increase in the dielectric constant and the longitudinal piezomodulus is observed with decreasing in-plane epitaxial stresses for LAO, LSAT, and STO substrates. The films on MgO substrates have the highest dielectric constant and piezomodulus with [formula omitted] below room temperature. The variation in [formula omitted] may be attributed to the shift in the transformation temperature from the paraelectric state to the relaxor state due to internal stresses in the film-substrate interface. Electrical and electromechanical properties should depend strongly on internal stresses in the vicinity of the phase transformation, which is reflected in our experimental observations. © 2000, American Institute of Physics. All rights reserved.
PY - 2000
SP - 438
EP - 440
T2 - Applied Physics Letters
TI - Role of substrate on the dielectric and piezoelectric behavior of epitaxial lead magnesium niobate-lead titanate relaxor thin films
VL - 77
SN - 00036951
ER -