TY - JOUR
AU - C.L Canedy
AU - S Aggarwal
AU - H Li
AU - T Venkatesan
AU - Ramamoorthy Ramesh
AU - F.W Van Keuls
AU - R.R Romanofsky
AU - F.A Miranda
AB - We report on the dielectric properties of an epitaxial heterostructure comprised of Ba1-xSrxTiO3, Bi4Ti3O12, and (ZrO2)0.91(Y2O3)0.09 grown on silicon substrates for potential use in microwave devices. Careful x-ray analysis indicates crystallographic alignment of all layers and transmission electron microscopy and Auger analysis reveals high quality epitaxy with minimal interdiffusion. The viability of using such heterostructures in actual microwave devices was assessed by incorporating the films in a coupled microstripline phase shifter design. The phase shifter devices, operating in the Ku band, had losses of less than 4 dB with a maximum phase shift of nearly 40° at 40 V. We compare this performance with a (Ba, Sr)TIO3/MgO phase shifter. These results presented represent significant progress towards integrating ferroelectric films with conventional silicon technology. © 2000: American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.1290724
LA - eng
M1 - 10
N1 - cited By 33
N2 - We report on the dielectric properties of an epitaxial heterostructure comprised of Ba1-xSrxTiO3, Bi4Ti3O12, and (ZrO2)0.91(Y2O3)0.09 grown on silicon substrates for potential use in microwave devices. Careful x-ray analysis indicates crystallographic alignment of all layers and transmission electron microscopy and Auger analysis reveals high quality epitaxy with minimal interdiffusion. The viability of using such heterostructures in actual microwave devices was assessed by incorporating the films in a coupled microstripline phase shifter design. The phase shifter devices, operating in the Ku band, had losses of less than 4 dB with a maximum phase shift of nearly 40° at 40 V. We compare this performance with a (Ba, Sr)TIO3/MgO phase shifter. These results presented represent significant progress towards integrating ferroelectric films with conventional silicon technology. © 2000: American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 2000
SP - 1523
EP - 1525
T2 - Applied Physics Letters
TI - Structural and dielectric properties of epitaxial Ba1-xSrxTiO3/Bi4Ti3O 12/ZrO2 heterostructures grown on silicon
VL - 77
SN - 00036951
ER -