TY - CPAPER KW - Pulsed laser deposition KW - Substrates KW - Lanthanum compounds KW - Epitaxial growth KW - Heterojunctions KW - Doping (additives) KW - Colossal magnetoresistance KW - Field effect semiconductor devices KW - Dielectric heterostructures AU - T Wu AU - S.B Ogale AU - J.E Garrison AU - B Nagaraj AU - Z Chen AU - Ramamoorthy Ramesh AU - T Venkatesan AU - Rzchowski M.S AU - Kawasaki M AU - Millis A.J AU - Molnar S AU - Rajeswari M AB -

We grow Pb(Zr,Ti)O3 (001)/La1-xCaxMnO3 (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4×105V/cm, but also the complementarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.

BT - Proceedings of the Materials Research Society Symposium - LA - eng N1 -

cited By 0

N2 -

We grow Pb(Zr,Ti)O3 (001)/La1-xCaxMnO3 (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4×105V/cm, but also the complementarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.

PY - 2000 SP - 363 EP - 370 T2 - Proceedings of the Materials Research Society Symposium - T3 - Materials Research Society Symposium - TI - Deposition and electrical characterization of dielectric/ferromagnetic heterostructure VL - 602 SN - 02729172 ER -