TY - CPAPER
KW - Annealing
KW - Alumina
KW - Sapphire
KW - Manganese
KW - Permittivity
KW - Ferroelectric thin films
KW - Growth (materials)
KW - Barium compounds
KW - Antenna phased arrays
KW - Oscillators (electronic)
KW - Phase shifters
KW - Radio communication
KW - Ferroelectric microwave devices
KW - RF communications
KW - Tunable filters
KW - Tunable microwave components
KW - Tunable oscillators
KW - Microwave devices
AU - F.W Van Keuls
AU - R.R Romanofsky
AU - C.H Mueller
AU - J.D Warner
AU - C.L Canedy
AU - Ramamoorthy Ramesh
AU - F.A Miranda
AB - The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film BaxSr1-xTiO3 tunable microwave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200° at 18 GHz and a figure of merit of 74.3°/dB). Issues of post-annealing, Mn-doping and BaxSr1-xTiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.
BT - Integrated Ferroelectrics
LA - eng
M1 - 1-4
N1 - cited By 25
N2 - The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film BaxSr1-xTiO3 tunable microwave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200° at 18 GHz and a figure of merit of 74.3°/dB). Issues of post-annealing, Mn-doping and BaxSr1-xTiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.
PY - 2001
SP - 1605/165
EP - 1616/176
T2 - Integrated Ferroelectrics
T3 - Integrated Ferroelectrics
TI - Current status of thin film (Ba,Sr)TiO3 tunable microwave components for RF communications
VL - 34
SN - 10584587
ER -