TY - CPAPER
KW - Oxidation
KW - Thin films
KW - Glass
KW - X-ray Diffraction
KW - X-ray photoelectron spectroscopy
KW - Molybdenum
KW - Desorption peak
KW - Field emitter arrays
KW - Partial oxidation
KW - Thermal desorption spectroscopy
KW - Ultraviolet photoelectron spectroscopy
AU - B.R Chalamala
AU - R.H Reuss
AU - Y Wei
AU - J.M Bernhard
AU - E.D Sosa
AU - D.E Golden
AU - S Aggarwal
AU - Ramamoorthy Ramesh
AB - Oxidation of emitter surfaces can be a serious problem for Mo field emitter arrays. We studied the oxidation and related changes in the electronic properties of Mo thin films as a function of annealing temperature. Experiments were done on Mo thin films prepared on Si and sodalime glass substrates. These films were thermally oxidized and characterized using a variety of techniques including x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and thermal desorption spectroscopy (TPD) methods. For films oxidized below 400°C, partial oxidation was observed, with MoO3(110) being the principal oxide phase. However, at a temperature of 500°C and above, oxidation of the film was complete. Electrical characteristics of the films undergo a rapid transition from semiconductive to highly insulating at temperatures between 475 to 500°C. Temperature programmed desorption spectra showed that the oxides are stable at elevated temperature with only a principal O2 desorption peak at approximately 786°C. © 2001 Materials Research Society.
BT - Proceedings of the Materials Research Society Symposium
LA - eng
N1 - cited By 0
N2 - Oxidation of emitter surfaces can be a serious problem for Mo field emitter arrays. We studied the oxidation and related changes in the electronic properties of Mo thin films as a function of annealing temperature. Experiments were done on Mo thin films prepared on Si and sodalime glass substrates. These films were thermally oxidized and characterized using a variety of techniques including x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and thermal desorption spectroscopy (TPD) methods. For films oxidized below 400°C, partial oxidation was observed, with MoO3(110) being the principal oxide phase. However, at a temperature of 500°C and above, oxidation of the film was complete. Electrical characteristics of the films undergo a rapid transition from semiconductive to highly insulating at temperatures between 475 to 500°C. Temperature programmed desorption spectra showed that the oxides are stable at elevated temperature with only a principal O2 desorption peak at approximately 786°C. © 2001 Materials Research Society.
PY - 2001
SN - 1558996214; 9781558996212/02729172
SP - 353
EP - 358
T2 - Proceedings of the Materials Research Society Symposium
T3 - Materials Research Society Symposium
TI - Oxidation of molybdenum thin films and its impact on molybdenum field emitter arrays
VL - 685
ER -