TY - CPAPER
AU - S.P Alpay
AU - A.L Roytburd
AU - V Nagarajan
AU - L.A Bendersky
AU - Ramamoorthy Ramesh
AB - Epitaxial ferroelectric films undergoing a cubic-tetragonal phase transformation relax internal stresses due to the structural phase transformation and the difference in the thermal expansion coefficients of the film and the substrate by forming polydomain structures. The most commonly observed polydomain structure is the c/a/c/a polytwin that relieves the internal stresses only partially. Relatively thicker films may completely reduce internal stresses if all three variants of the ferroelectric phase are brought together such that the film has the same in-plane size as the substrate. In this article, we provide experimental evidence on the formation of the 3-domain structure based on transmission electron microscopy in 450 nm thick (001) PbZr0.2Ti0.8O3 films on (001) SrTiO3 grown by pulsed laser deposition. X-ray diffraction studies show that the film is fully relaxed. Experimental data is analyzed in terms of a domain stability map. © 2001 Materials Research Society.
BT - Proceedings of the Materials Research Society Symposium -
LA - eng
N1 - cited By 1
N2 - Epitaxial ferroelectric films undergoing a cubic-tetragonal phase transformation relax internal stresses due to the structural phase transformation and the difference in the thermal expansion coefficients of the film and the substrate by forming polydomain structures. The most commonly observed polydomain structure is the c/a/c/a polytwin that relieves the internal stresses only partially. Relatively thicker films may completely reduce internal stresses if all three variants of the ferroelectric phase are brought together such that the film has the same in-plane size as the substrate. In this article, we provide experimental evidence on the formation of the 3-domain structure based on transmission electron microscopy in 450 nm thick (001) PbZr0.2Ti0.8O3 films on (001) SrTiO3 grown by pulsed laser deposition. X-ray diffraction studies show that the film is fully relaxed. Experimental data is analyzed in terms of a domain stability map. © 2001 Materials Research Society.
PY - 2001
SP - XLXXV
EP - XLXXVI
T2 - Proceedings of the Materials Research Society Symposium -
T3 - Materials Research Society Symposium -
TI - Cellular domain architecture of stress-free epitaxial ferroelectric films
VL - 655
SN - 02729172
ER -