TY - JOUR
KW - Electrochemistry
KW - Methodology
KW - Microscopy
KW - Metals
KW - Electron
KW - Iron
KW - Metal
KW - Scanning electron microscopy
KW - Chemistry
KW - Elasticity
KW - Nanotechnology
KW - Article
KW - Electric excitation
KW - Single crystals
KW - Piezoelectricity
KW - Lead compounds
KW - Surface properties
KW - Ferroelectric thin films
KW - Ferroelastic domains
KW - Surface property
KW - Scanning
KW - Microscopic examination
KW - Artificial membrane
KW - Biomedical Engineering
KW - Mechanics
KW - Membranes
KW - Artificial
AU - V Nagarajan
AU - A Roytburd
AU - A Stanishevsky
AU - S Prasertchoung
AU - T Zhao
AU - L Chen
AU - J Melngailis
AU - O Auciello
AU - Ramamoorthy Ramesh
AB - Dynamics of domain interfaces in a broad range of functional thin-film materials is an area of great current interest. In ferroelectric thin films, a significantly enhanced piezoelectric response should be observed if non-180° domain walls were to switch under electric field excitation. However, in continuous thin films they are clamped by the substrate, and therefore their contribution to the piezoelectric response is limited. In this paper we show that when the ferroelectric layer is patterned into discrete islands using a focused ion beam, the clamping effect is significantly reduced, thereby facilitating the movement of ferroelastic walls. Piezo-response scanning force microscopy images of such islands in PbZr0.2Ti 0.8O3 thin films clearly point out that the 90° domain walls can move. Capacitors 1 μm2 show a doubling of the remanent polarization at voltages higher than ∼15 V, associated with 90° domain switching, coupled with a d33 piezoelectric coefficient of ∼250 pm V-1 at remanence, which is approximately three times the predicted value of 87 pm V-1 for a single domain single crystal.
BT - Nature Materials
DO - 10.1038/nmat800
LA - eng
M1 - 1
N1 - cited By 410
N2 - Dynamics of domain interfaces in a broad range of functional thin-film materials is an area of great current interest. In ferroelectric thin films, a significantly enhanced piezoelectric response should be observed if non-180° domain walls were to switch under electric field excitation. However, in continuous thin films they are clamped by the substrate, and therefore their contribution to the piezoelectric response is limited. In this paper we show that when the ferroelectric layer is patterned into discrete islands using a focused ion beam, the clamping effect is significantly reduced, thereby facilitating the movement of ferroelastic walls. Piezo-response scanning force microscopy images of such islands in PbZr0.2Ti 0.8O3 thin films clearly point out that the 90° domain walls can move. Capacitors 1 μm2 show a doubling of the remanent polarization at voltages higher than ∼15 V, associated with 90° domain switching, coupled with a d33 piezoelectric coefficient of ∼250 pm V-1 at remanence, which is approximately three times the predicted value of 87 pm V-1 for a single domain single crystal.
PB - European Association for Cardio-Thoracic Surgery
PY - 2003
SP - 43
EP - 47
T2 - Nature Materials
TI - Dynamics of ferroelastic domains in ferroelectric thin films
VL - 2
SN - 14761122
ER -