TY - JOUR
KW - Deposition
KW - Transmission electron microscopy
KW - Scanning electron microscopy
KW - Atomic force microscopy
KW - Ferroelectric materials
KW - Strontium compounds
KW - Lead compounds
KW - Lead zirconate titanate (PZT)
KW - X-ray diffraction analysis
KW - Barium titanate
KW - Nanotubes
KW - Wetting
KW - Dynamic random access storage
KW - Second harmonic generation
KW - Chemical solution deposition
KW - Ferroelectric nanotubes
KW - Pore wetting
KW - Strontium bismuth tantalate
AU - F.D Morrison
AU - Y Luo
AU - I Szafraniak
AU - V Nagarajan
AU - R.B Wehrspohn
AU - M Steinhart
AU - J.H Wendorff
AU - N.D Zakharov
AU - E.D Mishina
AU - K.A Vorotilov
AU - A.S Sigov
AU - S Nakabayashi
AU - M Alexe
AU - Ramamoorthy Ramesh
AU - J.F Scott
AB - We report the independent invention of ferroelectric nanotubes from groups in several countries. Devices have been made with three different materials: lead zirconate-titanate PbZr1-xTixO3 (PZT); barium titanate BaTiO3; and strontium bismuth tantalate SrBi2Ta2O9,(SBT). Several different deposition techniques have been used successfully, including misted CSD (chemical solution deposition) and pore wetting. Ferroelectric hysteresis and high optical nonlinearity have been demonstrated. The structures are analyzed via SEM, TEM, XRD, AFM (piezo-mode), and SHG. Applications to trenching in Si dynamic random access memories, ink-jet printers, and photonic devices are discussed. Ferroelectric filled pores as small as 20 nm in diameter have been studied. © 2003 Advanced Study Center Co. Ltd.
BT - Reviews on Advanced Materials Science
LA - eng
M1 - 2
N1 - cited By 93
N2 - We report the independent invention of ferroelectric nanotubes from groups in several countries. Devices have been made with three different materials: lead zirconate-titanate PbZr1-xTixO3 (PZT); barium titanate BaTiO3; and strontium bismuth tantalate SrBi2Ta2O9,(SBT). Several different deposition techniques have been used successfully, including misted CSD (chemical solution deposition) and pore wetting. Ferroelectric hysteresis and high optical nonlinearity have been demonstrated. The structures are analyzed via SEM, TEM, XRD, AFM (piezo-mode), and SHG. Applications to trenching in Si dynamic random access memories, ink-jet printers, and photonic devices are discussed. Ferroelectric filled pores as small as 20 nm in diameter have been studied. © 2003 Advanced Study Center Co. Ltd.
PY - 2003
SP - 114
EP - 122
T2 - Reviews on Advanced Materials Science
TI - Ferroelectric nanotubes
VL - 4
SN - 16065131
ER -