A ferroelectric field effect transistor with an oxide channel layer and a lead zirconate titanate gate oxide has been fabricated. The channel is a strontium ruthenate/titanate solid solution with n type semiconducting behavior, which has sufficient OFF-state free carrier concentration to provide proper balancing charge for ferroelectric stability. The dependence of channel resistance with gate voltage at room temperature yields a hysteresis curve with two state at zero volts with a ΔR/R of 75% and a coercive voltage of 3 volts. The device was subjected to more than 1010 cycles with no degradation and was also operated at 60° C with a only a slight reduction in the switching ratio.
BT - Proceedings of the Materials Research Society Symposium - LA - eng N1 -cited By 1
N2 -A ferroelectric field effect transistor with an oxide channel layer and a lead zirconate titanate gate oxide has been fabricated. The channel is a strontium ruthenate/titanate solid solution with n type semiconducting behavior, which has sufficient OFF-state free carrier concentration to provide proper balancing charge for ferroelectric stability. The dependence of channel resistance with gate voltage at room temperature yields a hysteresis curve with two state at zero volts with a ΔR/R of 75% and a coercive voltage of 3 volts. The device was subjected to more than 1010 cycles with no degradation and was also operated at 60° C with a only a slight reduction in the switching ratio.
PY - 2003 SP - 287 EP - 292 T2 - Proceedings of the Materials Research Society Symposium - T3 - Materials Research Society Symposium - TI - Ferroelectric field effect device VL - 747 SN - 02729172 ER -