TY - JOUR
KW - Oxidation
KW - Thin films
KW - Copper
KW - Diffusion
KW - Annealing
KW - Electrodes
KW - Materials science
KW - Permittivity
KW - Capacitors
KW - Synthesis (chemical)
KW - Barium compounds
KW - Leakage currents
KW - Dielectric losses
KW - Diffusion barrier
AU - W Fan
AU - B Kabius
AU - J.M Miller
AU - S Saha
AU - J.A Carlisle
AU - O Auciello
AU - R.P.H Chang
AU - Ramamoorthy Ramesh
AB - An investigation on the synthesis and material properties of layered TiAl/Cu/Ta electrodes was performed to achieve the integration of Cu electrodes. The TiAl layer provided an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation while the Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate. Using the surface analytical methods, characterization of the Cu-based layered structure showed that two amorphous oxide layers were formed on both sides of the TiAl barrier.
BT - Journal of Applied Physics
DO - 10.1063/1.1616984
LA - eng
M1 - 9
N1 - cited By 32
N2 - An investigation on the synthesis and material properties of layered TiAl/Cu/Ta electrodes was performed to achieve the integration of Cu electrodes. The TiAl layer provided an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation while the Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate. Using the surface analytical methods, characterization of the Cu-based layered structure showed that two amorphous oxide layers were formed on both sides of the TiAl barrier.
PY - 2003
SP - 6192
EP - 6200
T2 - Journal of Applied Physics
TI - Materials science and integration bases for fabrication of (Ba xSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes
VL - 94
SN - 00218979
ER -