TY - JOUR
KW - Thin films
KW - Pulsed laser deposition
KW - Perovskite
KW - Electrodes
KW - Film growth
KW - Magnetic fields
KW - Electric fields
KW - Phase separation
KW - Lanthanum compounds
KW - Magnetization
KW - Metal insulator transition
KW - Field effect transistors
KW - Colossal magnetoresistance
KW - Electric conductivity
KW - Magnetic hysteresis
KW - Drain electrodes
KW - Semiconducting channels
KW - Semiconducting manganese compounds
KW - Semiconducting silicon
AU - T Zhao
AU - S.B Ogale
AU - S.R Shinde
AU - Ramamoorthy Ramesh
AU - R Droopad
AU - J Yu
AU - K Eisenbeiser
AU - J Misewich
AB - An all-perovskite ferroelectric field effect transistors (FeFET) structure with a ferroelectric Pb(Zr 0.2Ti 0.8)O 3 (PZT) gate and a colossal magnetoresistive (CMR) La 0.8Ca 0.2MnO 3 (LCMO) channel was fabricated by pulsed laser deposition (PLD). The tunability of the channel resistance under electric and magnetic fields was studied. The resistivity change under electric and magnetic fields was explained using the electronic phase separation scenario. A maximum modulation of 20% after an electric field poling of 1.5 × 10 5 V/cm and 50% under a magnetic field of 1T was observed near the metal-insulator transition temperature.
BT - Applied Physics Letters
DO - 10.1063/1.1644321
LA - eng
M1 - 5
N1 - cited By 69
N2 - An all-perovskite ferroelectric field effect transistors (FeFET) structure with a ferroelectric Pb(Zr 0.2Ti 0.8)O 3 (PZT) gate and a colossal magnetoresistive (CMR) La 0.8Ca 0.2MnO 3 (LCMO) channel was fabricated by pulsed laser deposition (PLD). The tunability of the channel resistance under electric and magnetic fields was studied. The resistivity change under electric and magnetic fields was explained using the electronic phase separation scenario. A maximum modulation of 20% after an electric field poling of 1.5 × 10 5 V/cm and 50% under a magnetic field of 1T was observed near the metal-insulator transition temperature.
PY - 2004
SP - 750
EP - 752
T2 - Applied Physics Letters
TI - Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si
VL - 84
SN - 00036951
ER -