TY - JOUR
KW - Thin films
KW - Pulsed laser deposition
KW - Molecular beam epitaxy
KW - Film growth
KW - Electric fields
KW - Atomic force microscopy
KW - Permittivity
KW - Interfaces (materials)
KW - X-ray diffraction analysis
KW - Leakage currents
KW - Antiphase domain boundaries (ADB)
KW - Flat substrates
KW - Vicinal substrates
KW - Magnesia
AU - H Zheng
AU - L Salamanca-Riba
AU - Ramamoorthy Ramesh
AU - H Li
AB - The epitaxial growth of Ba 0.5Sr 0.5TiO 3 (BST) thin films on MgO vicinal substrates by pulsed-laser deposition and molecular-beam epitaxy was described. The [001] oriented MgO substrates with 2° and 5° miscut toward [010] were considered. It was shown that the nucleation of antiphase domain boundaries in the direction parallel to the step edges was greatly reduced in BST films grown on the vicinal substrates compared to the films grown on flat substrates. It was observed that the reduction in antiphase domain boundaries gives rise to a higher dielectric constant when the electrodes were parallel to the direction of the steps, by about 280-460, than in the perpendicular direction.
BT - Applied Physics Letters
DO - 10.1063/1.1804609
LA - eng
M1 - 14
N1 - cited By 8
N2 - The epitaxial growth of Ba 0.5Sr 0.5TiO 3 (BST) thin films on MgO vicinal substrates by pulsed-laser deposition and molecular-beam epitaxy was described. The [001] oriented MgO substrates with 2° and 5° miscut toward [010] were considered. It was shown that the nucleation of antiphase domain boundaries in the direction parallel to the step edges was greatly reduced in BST films grown on the vicinal substrates compared to the films grown on flat substrates. It was observed that the reduction in antiphase domain boundaries gives rise to a higher dielectric constant when the electrodes were parallel to the direction of the steps, by about 280-460, than in the perpendicular direction.
PY - 2004
SP - 2905
EP - 2907
T2 - Applied Physics Letters
TI - Suppression of antiphase domain boundary formation in Ba 0.5Sr 0.5TiO 3 films grown on vicinal MgO substrates
VL - 85
SN - 00036951
ER -