TY - JOUR
KW - Lead
KW - Thin films
KW - Polycrystals
KW - Polarization
KW - Epitaxial growth
KW - Piezoelectricity
KW - Ferroelectric thin films
KW - Microelectromechanical devices
KW - Extrinsic effects
KW - In-plane strains
KW - Piezoelectric coefficients
AU - J Ouyang
AU - Ramamoorthy Ramesh
AU - A.L Roytburd
AB - As a function of film orientation, the intrinsic effective piezoelectric coefficient e31,f is generally formulated for a substrate-constrained ferroelectric film. Numerical results are obtained for Pb (Zrx Ti1-x) O3 (PZT) thin films with tetragonal and rhombohedral compositions. It is illustrated that the optimal orientation for e31,f are close to [001] orientation in both tetragonal and rhombohedral PZT films and the maximum calculated e31,f is about -30 Cm2 on the rhombohedral side of the morphotropic phase boundary. © 2005 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.1899252
LA - eng
M1 - 15
N1 - cited By 18
N2 - As a function of film orientation, the intrinsic effective piezoelectric coefficient e31,f is generally formulated for a substrate-constrained ferroelectric film. Numerical results are obtained for Pb (Zrx Ti1-x) O3 (PZT) thin films with tetragonal and rhombohedral compositions. It is illustrated that the optimal orientation for e31,f are close to [001] orientation in both tetragonal and rhombohedral PZT films and the maximum calculated e31,f is about -30 Cm2 on the rhombohedral side of the morphotropic phase boundary. © 2005 American Institute of Physics.
PY - 2005
SP - 1
EP - 3
T2 - Applied Physics Letters
TI - Intrinsic effective piezoelectric coefficient e 31,f for ferroelectric thin films
VL - 86
SN - 00036951
ER -